elektronische bauelemente UMZ1N 0.15 w, 150 ma, 60 v silicon epitaxial planar power management (dual transistors) 28-oct-2009 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. b l f h c j d g k a e 3 c 2 b 1 e 4 e 5 b 6 c tr1 tr2 z1 rohs compliant product a suffix of -c specifies halogen & lead-free features 2sa1037ak and 2sc2412k are housed independently in a package. transistor elements independent, eliminating interf erence. mounting cost and area can be cut in half. marking and equivalent circuit tr1 absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 7 v collector current C continuous i c 0.15 a collector power dissipation p c 0.15 w junction & storage temperature t j , t stg 150, -55~150 tr1 npn electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 60 - - v i c =50 a, i e =0 collector-emitter breakdown voltage v (br)ceo 50 - - v i c =1ma, i b =0 emitter-base breakdown voltage v (br)ebo 7 - - v i e =50 a, i c =0 collector cut-off current i cbo - - 0.1 a v cb =60v, i e =0 emitter cut-off current i ebo - - 0.1 a v eb =7v, i c =0 dc current gain h fe 120 - 560 v ce =6v, i c =1ma collector-emitter saturation voltage v ce(sat) - - 0.4 v i c =50ma, i b =5ma transition frequency f t - 180 - mhz v ce =12v, i c =2ma, f=100mhz collector output capacitance c ob - 2.0 3.5 pf v cb =12v, i e =0, f=1mhz tr2 absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -6 v collector current C continuous i c -0.15 a collector power dissipation p c 0.15 w junction & storage temperature t j , t stg 150, -55~150 tr2 pnp electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -60 - - v i c =-50 a, i e =0 collector-emitter breakdown voltage v (br)ceo -50 - - v i c =-1ma, i b =0 emitter-base breakdown voltage v (br)ebo -6 - - v i e =-50 a, i c =0 collector cut-off current i cbo - - -0.1 a v cb =-60v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb =-6v, i c =0 dc current gain h fe 120 - 560 v ce =-6v, i c =-1ma collector-emitter saturation voltage v ce(sat) - - -0.5 v i c =-50ma, i b =-5ma transition frequency f t - 140 - mhz v ce =-12v, i c =-2ma, f=100mhz collector output capacitance c ob - - 5 pf v cb =-12v, i e =0, f=1mhz sot-363 millimeter millimeter ref. min. max. ref. min. max. a 2.00 2.20 g 0.100 ref. b 2.15 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.15 d 0.90 1.10 k 8 e 1.20 1.40 l 0.650 typ. f 0.15 0.35 1 2 3 5 6 4
elektronische bauelemente UMZ1N 0.15 w, 150 ma, 60 v silicon epitaxial planar power management (dual transistors) 28-oct-2009 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical characteristics tr1 (npn)
elektronische bauelemente UMZ1N 0.15 w, 150 ma, 60 v silicon epitaxial planar power management (dual transistors) 28-oct-2009 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical characteristics (contd) tr1 (npn)
elektronische bauelemente UMZ1N 0.15 w, 150 ma, 60 v silicon epitaxial planar power management (dual transistors) 28-oct-2009 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical characteristics tr2 (pnp)
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